![]() Huang, Y.-Ch., Lee, P.C., Chien, C.H., Chiu, F.Y., Chen, Y.Y., and Harutyunyan, S.R., Physica B: Condensed Matter, 2014, vol. On this basis, Suzuura and Ando 15 predicted that these trajectories cause a quantum correction to the conductivity in the form of weak antilocalization. Zhao, L., Deng, H., Korzhovska, I., Begliarbekov, M., Chen, Zh., and Andrade. The earlier experiments that observed the weak anti-localization in topological insulators. Gopal, R.K., Singh, S., Chandra, R., and Mitra, Ch., AIP Adv., 2015, vol. Wang, J., DaSilva, A.M., Chang, C.Z., He, K., Jain, J.K., Samarth, N., Ma, X.C., Xue, Q.K., and Chan, M.H.W., Phys. Hikami, S., Larkin, A.I., and Nagaoka, Y., Prog. Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C.W., J. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. 56002.īrahlek, M., Koirala, N., Bansal, N., and Oh, S., Solid State Commun., 2015, vol. The films were found to be of good quality. Hamdou, B., Gooth, J., Dorn, A., Pippel, E., and Nielsch, K., Appl. 225.Īnalytis, J.G., McDonald, R.D., Riggs, S.C., Chu, J.-H., Boebinger, G.S., and Fisher, I.R., Nat. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. Weak antilocalization (WAL) in TI systems has a twofold origin, time reversal symmetry and a Berry phase acquired by the surface Dirac electrons going around the Dirac cone in momentum space due to spin momentum locking. It discusses the weak localization effect, i.e., quantum corrections to the Drude conductivity that are based on phase-coherent backscattering of electrons. Sengupta, P., Kubis, T., Tan, Y., and Klimeck, G., J. But the phase coherence length can reach up to 100nm to 1 m below the liquid helium temperature. Zang, Y., Küster, F., Zhang, J., Liu, D., Pal, B., Deniz, H., Sessi, P., Gilbert, M.J., and Parkin. Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused. 1057.īuga, S.G., Kulbachinskii, V.A., Kytin, V.G., Kytin, G.A., Kruglov, I.A., Lvova, N.A., Perov, N.S., Serebryanaya, N.R., Tarelkin, S.A. Zhang, J., Chang, C.-Z., Zhang, Z., Wen, J., Feng, X., Li, K., Liu, M., He, K., Wang, L., Chen, X., Xue, Q.-K., Ma, X., and Wang, Y., Nat. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. These results enrich the fundamental understanding of electronic transport properties of InSe.Zhang, H., Liu, Ch-X., Qi, X-L., Dai, Xi., Fang, Zh., and Zhang, Sh-Ch., Nat. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer Mo S 2 and few-layer black phosphorus. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron ( e − e) interactions are dominated dephasing mechanism for electronic transport in γ-InSe at low temperatures. l and prefactor values are shown they were obtained after fitting the xx(B) graph to (1). is much shorter than the sample size and phase coherence length, phase coherence of. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. 8.5.4.3 Near Zero Field: Weak Antilocalization As the magnetic field. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. Here we report the gate voltage and temperature-dependent magnetotransport properties of γ-InSe transistor devices with Hall mobility up to 2455 c m 2 V − 1 s − 1 at the temperature of 1.7 K. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. ![]()
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